Non-volatile memory cells based on ZnxCd1-xS ferroelectric Schottky diodes

Ferroelectric Schottky diodes were fabricated with n-type Zn0.4Cd0.6S. These devices show promising nonvolatile memory properties and the integration into complementary metal-oxide-semiconductor (CMOS) circuits seems feasible. So far, we have demonstrated on-resistances down to 100 Omega, on/off ratios up to 10(7), switching voltages below 100 mV, operating temperatures up to 180 degreesC, and switching times below 50 ns. The devices can be deposited at low temperatures (200 degreesC) by conventional rf-sputtering and survive the 30-min anneal at 400 degreesC in forming gas, which is mandatory in CMOS processing. (C) 2003 American Institute of Physics.