Temperature stability of intersubband transitions in AlN/GaN quantum wells

被引：13

作者：

Berland, Kristian ^{[1
]}

Stattin, Martin ^{[1
]}

Farivar, Rashid ^{[1
]}

Sultan, D. M. S. ^{[1
]}

Hyldgaard, Per ^{[1
]}

Larsson, Anders ^{[1
]}

Wang, Shu Min ^{[1
]}

Andersson, Thorvald G. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 04期

关键词：

aluminium compounds; conduction bands; gallium compounds; heat treatment; III-V semiconductors; molecular beam epitaxial growth; photoluminescence; piezoelectricity; Poisson equation; SCF calculations; Schrodinger equation; semiconductor heterojunctions; semiconductor quantum wells; thermal expansion; MOLECULAR-BEAM EPITAXY; MU-M; WAVELENGTH RANGE; ABSORPTION; EXCHANGE; ENERGY;

D O I：

10.1063/1.3456528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3456528]

引用

页数：3

共 18 条

[1]

AGGERSTAM T, 2007, P SPIE, V6479

[2] An explicit FDM calculation of nonparabolicity effects in energy states of quantum wells [J].

Alharbi, Fahhad .

OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (08) :551-559

[3] Macroscopic polarization and band offsets at nitride heterojunctions [J].

Bernardini, F ;

Fiorentini, V .

PHYSICAL REVIEW B, 1998, 57 (16) :R9427-R9430

[4] EFFECTS OF HARTREE, EXCHANGE, AND CORRELATION-ENERGY ON INTERSUBBAND TRANSITIONS [J].

BLOSS, WL .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3639-3642

[5] Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy [J].

Brandt, O ;

Muralidharan, R ;

Thamm, A ;

Waltereit, P ;

Ploog, KH .

APPLIED SURFACE SCIENCE, 2001, 175 :419-427

[6] Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers [J].

Gmachl, C ;

Ng, HM ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3722-3724

[7] Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm [J].

Gmachl, C ;

Ng, HM ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :334-336

[8]

Gunna S., 2007, NITRIDE SEMICONDUCTO

[9] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[10] Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy [J].

Helman, A ;

Tchernycheva, M ;

Lusson, A ;

Warde, E ;

Julien, FH ;

Moumanis, K ;

Fishman, G ;

Monroy, E ;

Daudin, B ;

Dang, DL ;

Bellet-Amalric, E ;

Jalabert, D .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5196-5198

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