Temperature stability of intersubband transitions in AlN/GaN quantum wells

被引：13

作者：

Berland, Kristian ^{[1
]}

Stattin, Martin ^{[1
]}

Farivar, Rashid ^{[1
]}

Sultan, D. M. S. ^{[1
]}

Hyldgaard, Per ^{[1
]}

Larsson, Anders ^{[1
]}

Wang, Shu Min ^{[1
]}

Andersson, Thorvald G. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 04期

关键词：

aluminium compounds; conduction bands; gallium compounds; heat treatment; III-V semiconductors; molecular beam epitaxial growth; photoluminescence; piezoelectricity; Poisson equation; SCF calculations; Schrodinger equation; semiconductor heterojunctions; semiconductor quantum wells; thermal expansion; MOLECULAR-BEAM EPITAXY; MU-M; WAVELENGTH RANGE; ABSORPTION; EXCHANGE; ENERGY;

D O I：

10.1063/1.3456528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3456528]

引用

页数：3

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