Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities

被引：0

作者：

Engstrom, O. ^{[1
]}

Kaniewska, M. ^{[1
]}

Kaczmarczyk, M. ^{[1
]}

机构：

[1] Inst Elect Technol, PL-02668 Warsaw, Poland

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

QDs; Defects; InAs/GaAs; MBE; DLTS;

D O I：

10.1063/1.3666371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Defects positioned close to a plane of quantum dots (QDs) are shown to be influenced by coulomb interaction effect when the quantum dots are charged by electrons. Signals from deep level transient spectroscopy (DLTS) measurement give rise to a mirror effect in the spectrum depending on movement of the defect energy level in relation to the Fermi-level as a result of the electron traffic at the QDs.

引用

页数：2

共 3 条

[1] Confined energy states in quantum dots detected by a resonant differential capacitance method [J].

Engstrom, O. ;

Kaniewska, M. ;

Kaczmarczyk, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

[2] Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique [J].

Kaniewska, M. ;

Engstrom, O. ;

Pacholak-Cybulska, M. ;

Sadeghi, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (04) :987-991

[3] Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy [J].

Kaniewska, M. ;

Engstrom, O. ;

Kaczmarczyk, M. .

JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) :766-772

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