High-voltage on-chip current sensor design and analysis for battery modules

被引：3

作者：

Wang, Chua-Chin ^{[1
]}

Hou, Zong-You ^{[1
]}

Lu, Wen-Je ^{[1
]}

Wang, Sheng-Syong ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

来源：

IET CIRCUITS DEVICES & SYSTEMS | 2016年 / 10卷 / 06期

关键词：

electric sensing devices; cells (electric); high-voltage on-chip current sensor design; HV battery module; CMOS processes; aspect sizes; physical on-chip; system measurement; voltage 36 V to 55 V; current; 0; 5 A to 2; 2; A; DC-DC CONVERTER; ELECTRIC VEHICLES; MANAGEMENT; SPEED;

D O I：

10.1049/iet-cds.2015.0374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large current sensing in a high-voltage (HV) battery module or string is hard to be realised on-chip. Thus, it is a disadvantage for the system to be miniaturised. A current sensor with a HV sense stage on silicon for HV battery modules is designed and analysed in this investigation. The proposed HV current sensor takes advantage of HV CMOS processes and resolves the problems caused by the voltage drop limitation thereof. The design methodology and analysis, including aspect sizes, are also presented. The physical on-chip and system measurement of the proposed HV current sensor demonstrates maximum error +/- 0.7% provided that the sensing voltage is 36-55 V, and the sensing current is 0.5-2.2 A.

引用

收藏

页码：492 / 496

页数：5

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