Impact of HfO2 in Graded Channel Dual Insulator Double Gate MOSFET

Scaling is an ongoing process and has become a trend in the microelectronics research. Extensive scaling of transistors results in short channel effects which impacts device performance. Double Gate MOSFET has been emerged as a possible solution to short channel effects and hence supports further scaling in nanometre region. However did not provide any improvement in electron transport efficiency. The present paper presents Dual Insulator architecture (combination of HfO2 and SiO2) as a possible solution to improve the electron transport efficiency in DG MOSFET. Further channel engineering in Dual Insulator Double Gate MOSFET results in higher transconductance and drain current.