PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

被引:96
作者
Huynh Van Ngoc [1 ]
Qian, Yongteng [1 ]
Han, Suk Kil [2 ]
Kang, Dae Joon [1 ]
机构
[1] Sungkyunkwan Univ, Dept Phys & Interdisciplinary, Course Phys & Chem, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea
[2] Teraleader Inc, 55-8,Techno 11ro, Daejeon 34036, South Korea
基金
新加坡国家研究基金会;
关键词
HEXAGONAL BORON-NITRIDE; AREA GRAPHENE FILMS; MONOLAYER GRAPHENE; HIGH-QUALITY; EFFICIENT TRANSFER; LAYER GRAPHENE; GROWTH; COPPER; MOS2;
D O I
10.1038/srep33096
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS2 on SiO2/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices.
引用
收藏
页数:9
相关论文
共 32 条
[1]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/NNANO.2010.132, 10.1038/nnano.2010.132]
[2]   Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper [J].
Banszerus, Luca ;
Schmitz, Michael ;
Engels, Stephan ;
Dauber, Jan ;
Oellers, Martin ;
Haupt, Federica ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Beschoten, Bernd ;
Stampfer, Christoph .
SCIENCE ADVANCES, 2015, 1 (06)
[3]   Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates [J].
Caldwell, Joshua D. ;
Anderson, Travis J. ;
Culbertson, James C. ;
Jernigan, Glenn G. ;
Hobart, Karl D. ;
Kub, Fritz J. ;
Tadjer, Marko J. ;
Tedesco, Joseph L. ;
Hite, Jennifer K. ;
Mastro, Michael A. ;
Myers-Ward, Rachael L. ;
Eddy, Charles R., Jr. ;
Campbell, Paul M. ;
Gaskill, D. Kurt .
ACS NANO, 2010, 4 (02) :1108-1114
[4]   Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies [J].
Cancado, L. G. ;
Jorio, A. ;
Martins Ferreira, E. H. ;
Stavale, F. ;
Achete, C. A. ;
Capaz, R. B. ;
Moutinho, M. V. O. ;
Lombardo, A. ;
Kulmala, T. S. ;
Ferrari, A. C. .
NANO LETTERS, 2011, 11 (08) :3190-3196
[5]   Raman fingerprint of charged impurities in graphene [J].
Casiraghi, C. ;
Pisana, S. ;
Novoselov, K. S. ;
Geim, A. K. ;
Ferrari, A. C. .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[6]   Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition [J].
Chan, Jack ;
Venugopal, Archana ;
Pirkle, Adam ;
McDonnell, Stephen ;
Hinojos, David ;
Magnuson, Carl W. ;
Ruoff, Rodney S. ;
Colombo, Luigi ;
Wallace, Robert M. ;
Vogel, Eric M. .
ACS NANO, 2012, 6 (04) :3224-3229
[7]   High-quality and efficient transfer of large-area graphene films onto different substrates [J].
Chen, Xu-Dong ;
Liu, Zhi-Bo ;
Zheng, Chao-Yi ;
Xing, Fei ;
Yan, Xiao-Qing ;
Chen, Yongsheng ;
Tian, Jian-Guo .
CARBON, 2013, 56 :271-278
[8]   Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices [J].
Cheng, Zengguang ;
Zhou, Qiaoyu ;
Wang, Chenxuan ;
Li, Qiang ;
Wang, Chen ;
Fang, Ying .
NANO LETTERS, 2011, 11 (02) :767-771
[9]   Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu [J].
de la Rosa, Cesar J. Lockhart ;
Sun, Jie ;
Lindvall, Niclas ;
Cole, Matthew T. ;
Nam, Youngwoo ;
Loffler, Markus ;
Olsson, Eva ;
Teo, Kenneth B. K. ;
Yurgens, August .
APPLIED PHYSICS LETTERS, 2013, 102 (02)
[10]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726