Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

被引：36

作者：

Hota, Mrinal K. ^{[1
]}

Chandra, Suman ^{[2
,3
]}

Lei, Yongjiu ^{[1
]}

Xu, Xiangming ^{[1
]}

Hedhili, Mohamed N. ^{[4
]}

Emwas, Abdul-Hamid ^{[4
]}

Shekhah, Osama ^{[2
]}

Eddaoudi, Mohamed ^{[2
]}

Alshareef, Husam N. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia

[2] King Abdullah Univ Sci & Technol KAUST, Adv Membranes & Porous Mat Ctr, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[3] Tech Univ Berlin, Str 17 Juni 135, D-10623 Berlin, Germany

[4] King Abdullah Univ Sci & Technol KAUST, Core Labs, Thuwal 239556900, Saudi Arabia

来源：

ADVANCED FUNCTIONAL MATERIALS | 2022年 / 32卷 / 23期

关键词：

covalent organic frameworks; electrochemical transistors; neuromorphic memory; thin films; ELECTROLYTE-GATED TRANSISTORS; GRAPHENE; OXIDE; CRYSTALLINE; PERFORMANCE; STABILITY; SPECTRA; SYNAPSE; ROUTE;

D O I：

10.1002/adfm.202201120

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4 '-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N(sic)N-) functionalized ss-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 10(3) times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm(2) V-1 s(-1). The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent-organic framework development in iontronic applications.

引用

页数：9

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