Scalable high performance radio frequency electronics based on large domain bilayer MoS2

被引:112
作者
Gao, Qingguo [1 ,2 ]
Zhang, Zhenfeng [1 ,2 ]
Xu, Xiaole [1 ,2 ]
Song, Jian [1 ,2 ]
Li, Xuefei [1 ,2 ]
Wu, Yanqing [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTOR; MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; ATOMIC LAYERS; GROWTH; MIXER; LIMIT;
D O I
10.1038/s41467-018-07135-8
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Atomically-thin layered molybdenum disulfide (MoS2) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS2 is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS2. Here, we systematically investigate the synthesis of high quality bilayer MoS2 by chemical vapor deposition on molten glass with increasing domain sizes up to 200 mu m. High performance transistors with optimized high-K dielectrics deliver ON-current of 427 mu A mu m(-1) at 300 K and a record high ON-current of 1.52 mA mu m(-1) at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS2 mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.
引用
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页数:8
相关论文
共 50 条
[1]  
Alharbi A, 2017, IEEE DEVICE RES CONF, DOI 10.1109/DRC.2017.7999404
[2]  
Amithraj V., 2015, 2D MATER, V2
[3]   A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon [J].
Andersson, Michael A. ;
Zhang, Yaxin ;
Stake, Jan .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (01) :165-172
[4]   Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime [J].
Chang, Hsiao-Yu ;
Yogeesh, Maruthi Nagavalli ;
Ghosh, Rudresh ;
Rai, Amritesh ;
Sanne, Atresh ;
Yang, Shixuan ;
Lu, Nanshu ;
Banerjee, Sanjay Kumar ;
Akinwande, Deji .
ADVANCED MATERIALS, 2016, 28 (09) :1818-1823
[5]   Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass [J].
Chen, Jianyi ;
Zhao, Xiaoxu ;
Tan, Sherman J. R. ;
Xu, Hai ;
Wu, Bo ;
Liu, Bo ;
Fu, Deyi ;
Fu, Wei ;
Geng, Dechao ;
Liu, Yanpeng ;
Liu, Wei ;
Tang, Wei ;
Li, Linjun ;
Zhou, Wu ;
Sum, Tze Chien ;
Loh, Kian Ping .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (03) :1073-1076
[6]   Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2 [J].
Chen, Wei ;
Zhao, Jing ;
Zhang, Jing ;
Gu, Lin ;
Yang, Zhenzhong ;
Li, Xiaomin ;
Yu, Hua ;
Zhu, Xuetao ;
Yang, Rong ;
Shi, Dongxia ;
Lin, Xuechun ;
Guo, Jiandong ;
Bai, Xuedong ;
Zhang, Guangyu .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 137 (50) :15632-15635
[7]   Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics [J].
Cheng, Rui ;
Jiang, Shan ;
Chen, Yu ;
Liu, Yuan ;
Weiss, Nathan ;
Cheng, Hung-Chieh ;
Wu, Hao ;
Huang, Yu ;
Duan, Xiangfeng .
NATURE COMMUNICATIONS, 2014, 5
[8]  
Deen M.J., 2002, CMOS RF MODELING CHA
[9]   MoS2 transistors with 1-nanometer gate lengths [J].
Desai, Sujay B. ;
Madhvapathy, Surabhi R. ;
Sachid, Angada B. ;
Llinas, Juan Pablo ;
Wang, Qingxiao ;
Ahn, Geun Ho ;
Pitner, Gregory ;
Kim, Moon J. ;
Bokor, Jeffrey ;
Hu, Chenming ;
Wong, H. -S. Philip ;
Javey, Ali .
SCIENCE, 2016, 354 (6308) :99-102
[10]   Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition [J].
English, Chris D. ;
Shine, Gautam ;
Dorgan, Vincent E. ;
Saraswat, Krishna C. ;
Pop, Eric .
NANO LETTERS, 2016, 16 (06) :3824-3830