Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1-x-yNy/GaP quantum wells. The GaAsxP1-x-yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570630]