Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells

被引：8
|
作者：
Zhu, Yuan-Hui [1 ]
Yu, Hong-Yu [1 ]
Fan, Wei-Jun [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期
关键词：
ALLOYS; GAP; SEMICONDUCTORS; PARAMETERS; NITROGEN;
D O I：
10.1063/1.3570630
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1-x-yNy/GaP quantum wells. The GaAsxP1-x-yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570630]
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页数：3
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