Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures

Excitation spectra of erbium photoluminescence (lambda = 1540 nm) in Si : Er epitaxial structures were studied within a broad pump wavelength range (lambda = 780-1500 nm). Erbium photoluminescence was observed to occur at pump energies substantially less than the silicon band-gap width. Possible mechanisms of erbium ion excitation in this pump radiation energy region are discussed. (C) 2004 MAIK "Nauka / Interperiodica".