Ion-implanted GaAs nano-particles in Si wafers

被引：0
|
作者：
Mondragon-Galicia, G [1 ]
Reyes-Gasga, J [1 ]
White, W [1 ]
Yacaman, MJ [1 ]
机构：
[1] Inst Nacl Invest Nucl, Mexico City 46202, DF, Mexico
来源：
ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：465 / 466
页数：2
相关论文
共 50 条
  • [21] ANNEALING OF EXPANSION IN ION-IMPLANTED GAAS
    HANAZAWA, T
    YAMAGUCH.J
    GAMO, K
    ITOH, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) : 1487 - 1488
  • [22] Structural Changes in Ion-Implanted GaAs
    Akimov, A. N.
    Vlasukova, L. A.
    Journal of Friction and Wear, 1994, 15 (3-6)
  • [23] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    SIU, DP
    IMMORLICA, AA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 722 - 722
  • [24] ION-IMPLANTED SILICON PROFILES IN GAAS
    LEE, DH
    MALBON, RM
    APPLIED PHYSICS LETTERS, 1977, 30 (07) : 327 - 329
  • [25] CHROMIUM REDISTRIBUTION IN ION-IMPLANTED GAAS
    YEE, CML
    NICHOLS, KB
    FEDDERS, PA
    WOLFE, CM
    PARK, YS
    SOLID-STATE ELECTRONICS, 1984, 27 (05) : 453 - 457
  • [26] PROPERTIES OF ION-IMPLANTED GAAS DIODES
    ROUGHAN, PE
    MANCHESTER, KE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 278 - +
  • [27] YB LUMINESCENCE IN ION-IMPLANTED GAAS
    KONNOV, VM
    LARIKOVA, TV
    LOYKO, NN
    DRAVIN, VA
    USHAKOV, VV
    GIPPIUS, AA
    SOLID STATE COMMUNICATIONS, 1995, 96 (11) : 839 - 842
  • [28] INFRARED REFLECTION OF ION-IMPLANTED GAAS
    KACHARE, AH
    SPITZER, WG
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2938 - 2946
  • [29] EXTENDED DEFECTS OF ION-IMPLANTED GAAS
    JONES, KS
    ALLEN, EL
    ROBINSON, HG
    STEVENSON, DA
    DEAL, MD
    PLUMMER, JD
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) : 6790 - 6795
  • [30] Study of defect behavior in ion-implanted Si wafers by slow positron annihilation spectroscopy
    Fujinami, M
    Hayashi, S
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1165 - 1169
12345