Structure and optical characterization of silicon nitride films deposited by r.f.magnetron sputtering

被引：0
|
作者：
Jia Xiaoyun [1 ]
Zheng, Xu [1 ]
Yu, Tang [2 ]
Zhou Chunlan [2 ]
Wang Wenjing [2 ]
Zhao Suling [1 ]
机构：
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China
来源：
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V | 2007年
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D O I：
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中图分类号：
TU [建筑科学];
学科分类号：
0813 ;
摘要：
Silicon nitride films were deposited by radio frequency (r.f.) magnetron sputtering in an Ar-N-2 gas mixture at a low substrate temperature. Subsequently the samples were annealed in pure N-2 ambience. Influences of the Ar/N-2 gas flow ratio as well as annealing on the optical properties and structure were studied. The optical properties of the films before annealing were examined using transmittance spectra. The composition of the samples was investigated by Fourier transform infrared (FTIR) spectra. Microstructure of the films was investigated using atomic force microscope (AFM). The films after annealing compared to former present a more compact construct, which is very dependent on the hydrogen concentration in the film.
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页码：1185 / +
页数：2
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