A modulation-doped longwave infrared quantum dot photodetector with high photoresponsivity

被引：19

作者：

Lu, Xuejun

Vaillancourt, Jarrod

Meisner, Mark J.

机构：

[1] Univ Massachusetts Lowell, Dept Elect & Comp Engn, Lowell, MA 01854 USA

[2] Raytheon Missile Syst, Tucson, AZ 85734 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 09期

关键词：

PERFORMANCE; RESPONSIVITY; DETECTIVITY; GAIN;

D O I：

10.1088/0268-1242/22/9/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InAs-InGaAs quantum dot (QD) longwave infrared ( LWIR) photodetector (QDIP) with a peak wavelength of 8.2 mu m is presented. The QDIP has modulation-doped QD active layers. At 77 K, the QDIP showed high photoresponsivities of 5.4 A W-1 and 3.6 A W-1 at biases of -0.8 V and 0.6 V, respectively. A peak photodetectivity of 7.8 x 10(9) cm Hz(1/2) W-1 was obtained at 77 K in an IR detector compatible package.

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收藏

页码：993 / 996

页数：4

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