Physics of Quantum Well Solar Cells

被引：4

作者：

Ekins-Daukes, N. J. ^{[1
]}

Adams, J. ^{[1
]}

Ballard, I. M. ^{[1
]}

Barnham, K. W. J. ^{[1
,2
]}

Browne, B. ^{[1
]}

Connolly, J. P. ^{[1
]}

Tibbits, T. ^{[2
]}

Hill, G. ^{[3
]}

Roberts, J. S. ^{[2
,3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

[2] Quantasol Ltd, Kingston Upon Thames KT1 3GZ, Surrey, England

[3] Univ Sheffield, Natl Facil Semicond 3 5, Sheffield, S Yorkshire, England

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVII | 2009年 / 7211卷

关键词：

Quantum well; solar cell; III-V; SHORT-CIRCUIT CURRENT; CARRIER ESCAPE; ENHANCEMENT; NUMBER;

D O I：

10.1117/12.816946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Incorporating quantum wells into multi-junction III-V solar cells provides a means of adjusting the absorption edge of the component junctions. Further, by using alternating compressive and tensile materials, a strain-balanced stack of quantum well and barrier layers can be grown, defect free, providing absorption-edge / lattice parameter combinations that are inaccessible using bulk materials. Incomplete absorption in the quantum wells has been addressed using a distributed Bragg reflector, extending the optical path length through the cell and enabling photon recycling to take place. State of the art single-junction quantum well solar cells have now reached an efficiency of 27.3% under 500X solar concentration and are projected to reach 34% in a double junction configuration.

引用

页数：11

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