Physics of Quantum Well Solar Cells

被引:4
作者
Ekins-Daukes, N. J. [1 ]
Adams, J. [1 ]
Ballard, I. M. [1 ]
Barnham, K. W. J. [1 ,2 ]
Browne, B. [1 ]
Connolly, J. P. [1 ]
Tibbits, T. [2 ]
Hill, G. [3 ]
Roberts, J. S. [2 ,3 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England
[2] Quantasol Ltd, Kingston Upon Thames KT1 3GZ, Surrey, England
[3] Univ Sheffield, Natl Facil Semicond 3 5, Sheffield, S Yorkshire, England
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVII | 2009年 / 7211卷
关键词
Quantum well; solar cell; III-V; SHORT-CIRCUIT CURRENT; CARRIER ESCAPE; ENHANCEMENT; NUMBER;
D O I
10.1117/12.816946
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Incorporating quantum wells into multi-junction III-V solar cells provides a means of adjusting the absorption edge of the component junctions. Further, by using alternating compressive and tensile materials, a strain-balanced stack of quantum well and barrier layers can be grown, defect free, providing absorption-edge / lattice parameter combinations that are inaccessible using bulk materials. Incomplete absorption in the quantum wells has been addressed using a distributed Bragg reflector, extending the optical path length through the cell and enabling photon recycling to take place. State of the art single-junction quantum well solar cells have now reached an efficiency of 27.3% under 500X solar concentration and are projected to reach 34% in a double junction configuration.
引用
收藏
页数:11
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