Ion beam synthesis of TiSi2 in (100)Si and (111)Si

被引：0
作者：
Jin, S
Chen, LJ
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期
关键词：
ion beam synthesis; titanium silicide;
D O I：
10.1016/S0254-0584(98)00098-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion beam synthesis of TiSi2 in (100)Si and (111)Si has been investigated. The formation of a Ti silicide layer was found to depend on the substrate orientation and implantation dose. Both are correlated to the Ti ion implantation profiles. The concentration peaks of implanted metal atoms are expected to be lower and broader in (100) samples than those in (111) samples, since (111) is the closest packed plane of Si. For high-dose implantation ( > 1.0 x 10(17) cm(-2)), the peaks of the profiles shift significantly towards the surface with the dose. It was revealed that the formation of TiSi2 depends on the concentration of Ti in silicon. TiSi2 formed first at the peak of the Ti concentration profile. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：360 / 364
页数：5
相关论文
共 8 条
[1]   EPITAXIAL-GROWTH OF TRANSITION-METAL SILICIDES ON SILICON [J].
CHEN, LJ ;
TU, KN .
MATERIALS SCIENCE REPORTS, 1991, 6 (2-3) :53-140
[2]   FORMATION AND MICROSTRUCTURAL DEVELOPMENT OF TISI2 IN (111)SI BY TI ION-IMPLANTATION AND ANNEALING AT 950-DEGREES-C [J].
JIN, S ;
AINDOW, M ;
ZHANG, Z ;
CHEN, LJ .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (04) :891-899
[3]   ION-BEAM SYNTHESIS OF YTTRIUM SILICIDES IN (111)SI [J].
JIN, S ;
LIN, JH ;
CHEN, LJ ;
SHI, WD ;
ZHANG, Z .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :347-351
[4]   GROWTH-KINETICS OF AMORPHOUS INTERLAYER FORMED BY INTERDIFFUSION OF POLYCRYSTALLINE TI THIN-FILM AND SINGLE-CRYSTAL SILICON [J].
LUR, W ;
CHEN, LJ .
APPLIED PHYSICS LETTERS, 1989, 54 (13) :1217-1219
[5]  
MADAKSON P, 1988, MATER RES SOC S P, V107, P281
[6]   ION-BEAM SYNTHESIS OF EPITAXIAL SILICIDES - FABRICATION, CHARACTERIZATION AND APPLICATIONS [J].
MANTL, S .
MATERIALS SCIENCE REPORTS, 1992, 8 (1-2) :1-95
[7]   MICROMECHANISM FOR METALLIC-GLASS FORMATION BY SOLID-STATE REACTIONS [J].
SCHRODER, H ;
SAMWER, K ;
KOSTER, U .
PHYSICAL REVIEW LETTERS, 1985, 54 (03) :197-200
[8]   MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J].
WHITE, AE ;
SHORT, KT ;
DYNES, RC ;
GARNO, JP ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1987, 50 (02) :95-97
1