Large-signal analysis of MOS varactors in CMOS -Gm LC VCOs

被引：128
作者：
Bunch, RL
Raman, S
机构：
[1] RF Micro Devices, Greensboro, NC 27409 USA
[2] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 08期
基金：
美国国家科学基金会;
关键词：
CMOS integrated circuits; nonlinear circuits; oscillators; varactors; NOISE; DESIGN;
D O I：
10.1109/JSSC.2003.814416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOS varactors are used extensively as. tunable elements in the tank circuits of RF voltage-controlled -oscillators (VCOs) based on submicrometer CMOS technologies. MOS varactor topologies include conventional D = S = B connected, inversion-mode (I-MOS), and accumulation-mode (A-MOS) structures. When incorporated into the VCO tank circuit, the large-signal swing of the VCO output oscillation modulates the varactor capacitance in time, resulting in a VCO tuning curve that deviates from the dc tuning curve of the particular varactor struc-w ture. This paper presents a detailed analysis of this large-signal effect. Simulated results are compared to measurements for an example 2.5-GHz complementary -G(m) LC VCO using I-MOS varactors implemented in 0;35-mum CMOS technology.
引用
收藏
页码：1325 / 1332
页数：8
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