First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 μm

被引：3

作者：

Fradet, Mathieu ^{[1
]}

Hosoda, Takashi ^{[2
]}

Frez, Clifford ^{[1
]}

Shterengas, Leon ^{[2
]}

Sander, Stanley ^{[1
]}

Forouhar, Siamak ^{[1
]}

Belenky, Gregory ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA

[2] SUNY Stony Brook, Dept ECE, Stony Brook, NY 11794 USA

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XV | 2016年 / 9767卷

基金：

美国国家科学基金会;

关键词：

Distributed-feedback; diode lasers; single frequency; GaSb; type-I; laser sensors;

D O I：

10.1117/12.2213224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 mu m as potential sources for OH measurements. The laser heterostmctures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 degrees C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/degrees C.

引用

页数：6

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