MRAM gets closer to the core

被引：19

作者：

Liu, Yizhou ^{[1
]}

Yu, Guoqiang ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing, Peoples R China

来源：

NATURE ELECTRONICS | 2019年 / 2卷 / 12期

关键词：

D O I：

10.1038/s41928-019-0340-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvements in magnetic tunnel junctions allows a 2 MB magnetic random-access memory array to be scaled for L4 cache applications.

引用

页码：555 / 556

页数：2

共 10 条

[1]

Alzate J. G., P 2019 IEEE INT EL D

[2]

Amiri Pedram Khalili, 2012, SPIN, V2, DOI 10.1142/S2010324712400024

[3]

Gallagher W. J., 2019, P 2019 S VLSI TECHN, pT190

[4]

Golonzka O, 2018, INT EL DEVICES MEET

[5]

Lee K, 2018, INT EL DEVICES MEET

[6] Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum [J].

Liu, Luqiao ;

Pai, Chi-Feng ;

Li, Y. ;

Tseng, H. W. ;

Ralph, D. C. ;

Buhrman, R. A. .

SCIENCE, 2012, 336 (6081) :555-558

[7] Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection [J].

Mihai Miron, Ioan ;

Garello, Kevin ;

Gaudin, Gilles ;

Zermatten, Pierre-Jean ;

Costache, Marius V. ;

Auffret, Stephane ;

Bandiera, Sebastien ;

Rodmacq, Bernard ;

Schuhl, Alain ;

Gambardella, Pietro .

NATURE, 2011, 476 (7359) :189-U88

[8]

Shiota Y, 2012, NAT MATER, V11, P39, DOI [10.1038/NMAT3172, 10.1038/nmat3172]

[9]

Song YJ, 2018, INT EL DEVICES MEET

[10]

Wang WG, 2012, NAT MATER, V11, P64, DOI [10.1038/nmat3171, 10.1038/NMAT3171]

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