The study on the temperature compensation method of piezoresistance silicon film sensor

被引：0

作者：

Guo, T

Shi, YB

Zhang, WD

机构：

来源：

ISTM/2003: 5TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-6, CONFERENCE PROCEEDINGS | 2003年

关键词：

PN-junction; temperature compensation; piezoresistance sensor;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The theory and method of temperature compensation about piezoresistance sensor are described. in the paper with emphasis on the compensation method of 3028,the silicon piezoresistance acceleration sensor. Experiment data are shown in it. It is the feature of the kind of compensation method that using a few of components, compensation easily and powerful practicability.

引用

页码：2368 / 2370

页数：3