Interference Effects in the Electroreflectance and Electroluminescence Spectra of InGaN/AlGaN/GaN Light-Emitting-Diode Heterostructures

被引：8

作者：

Avakyants, L. P. ^{[1
]}

Bokov, P. Yu. ^{[1
]}

Chervyakov, A. V. ^{[1
]}

Chuyas, A. V. ^{[1
]}

Yunovich, A. E. ^{[1
]}

Vasileva, E. D. ^{[2
]}

Bauman, D. A. ^{[2
]}

Uelin, V. V. ^{[2
]}

Yavich, B. S. ^{[2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[2] JSC Svetlana Optoelect, St Petersburg 194156, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 08期

关键词：

EFFICIENCY; INTERFACE;

D O I：

10.1134/S1063782610080245

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.

引用

页码：1090 / 1095

页数：6

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