Interference Effects in the Electroreflectance and Electroluminescence Spectra of InGaN/AlGaN/GaN Light-Emitting-Diode Heterostructures

被引：8
|
作者：
Avakyants, L. P. [1 ]
Bokov, P. Yu. [1 ]
Chervyakov, A. V. [1 ]
Chuyas, A. V. [1 ]
Yunovich, A. E. [1 ]
Vasileva, E. D. [2 ]
Bauman, D. A. [2 ]
Uelin, V. V. [2 ]
Yavich, B. S. [2 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
[2] JSC Svetlana Optoelect, St Petersburg 194156, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 08期
关键词：
EFFICIENCY; INTERFACE;
D O I：
10.1134/S1063782610080245
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.
引用
收藏
页码：1090 / 1095
页数：6
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