Antimonide-based DFB lasers emitting above 2.6 μm

被引：3

作者：

Barat, D. ^{[1
]}

Angellier, J. ^{[1
]}

Vicet, A. ^{[1
]}

Rouillard, Y. ^{[1
]}

Le Gratiet, L. ^{[2
]}

Guilet, S. ^{[2
]}

Martinez, A. ^{[2
]}

Ramdane, A. ^{[2
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5214, Inst Electron Sud, F-34095 Montpellier 05, France

[2] CNRS, UPR 020, Lab Photon Nanostruct, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 23期

关键词：

D O I：

10.1049/el:20071998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The devices operate in the continuous-wave regime at room temperature with a single frequency emission above 2.6 mu m.

引用

页码：1281 / 1282

页数：2

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