Deep centers in a free-standing GaN layer

被引:95
作者
Fang, ZQ [1 ]
Look, DC
Visconti, P
Wang, DF
Lu, CZ
Yun, F
Morkoç, H
Park, SS
Lee, KY
机构
[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[4] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[5] Samsung Adv Inst Technol, Suwon 440600, South Korea
关键词
D O I
10.1063/1.1361273
中图分类号
O59 [应用物理学];
学科分类号
摘要
Schottky barrier diodes, on both Ga and N faces of a similar to 300-mum-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al2O3 followed by laser separation, were studied by capacitance-voltage and deep level transient spectroscopy (DLTS) measurements. From a 1/C-2 vs V analysis, the barrier heights of Ni/Au Schottky contacts were determined to be different for the two polar faces: 1.27 eV for the Ga face, and 0.75 eV for the N face. In addition to the four common DLTS traps observed previously in other epitaxial GaN including HVPE-grown GaN a new trap B-' with activation energy E-T=0.53 eV was found in the Ga-face sample. Also, trap E-1 (E-T=0.18 eV), believed to be related to the N vacancy, was found in the N-face sample, and trap C (E-T=0.35 eV) was in the Ga-face sample. Trap C may have arisen from reactive-ion-etching damage. (C) 2001 American Institute of Physics.
引用
收藏
页码:2178 / 2180
页数:3
相关论文
共 12 条
  • [1] Sputter deposition-induced electron traps in epitaxially grown n-GaN
    Auret, FD
    Goodman, SA
    Koschnick, FK
    Spaeth, JM
    Beaumont, B
    Gibart, P
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (15) : 2173 - 2175
  • [2] Electron beam and optical depth profiling of quasibulk GaN
    Chernyak, L
    Osinsky, A
    Nootz, G
    Schulte, A
    Jasinski, J
    Benamara, M
    Liliental-Weber, Z
    Look, DC
    Molnar, RJ
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (17) : 2695 - 2697
  • [3] Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
    Fang, ZQ
    Look, DC
    Jasinski, J
    Benamara, M
    Liliental-Weber, Z
    Molnar, RJ
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (03) : 332 - 334
  • [4] FANG ZQ, 2001, 2000 INT SEM INS MAT, P35
  • [5] JASINSKI JM, COMMUNICATION
  • [6] Schottky barriers on n-GaN grown on SiC
    Kalinina, EV
    Kuznetsov, NI
    Dmitriev, VA
    Irvine, KG
    Carter, CH
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 831 - 834
  • [7] Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
    Kelly, MK
    Vaudo, RP
    Phanse, VM
    Görgens, L
    Ambacher, O
    Stutzmann, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3A): : L217 - L219
  • [8] Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements
    Look, DC
    Molnar, RJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3377 - 3379
  • [9] Molnar RJ, 1999, SEMICONDUCT SEMIMET, V57, P1
  • [10] Rhoderick EH., 1988, Metal-Semiconductor Contacts