Rigorous simulation of exposure over non-planar wafers

被引：15

作者：

Erdmann, A ^{[1
]}

Kalus, C ^{[1
]}

Schmöller, T ^{[1
]}

Klyonova, Y ^{[1
]}

Sato, T ^{[1
]}

Endo, A ^{[1
]}

Shibata, T ^{[1
]}

Kobayashi, Y ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, FhG IISB, D-91058 Erlangen, Germany

来源：

OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3 | 2003年 / 5040卷

关键词：

lithography modeling; wafer topography; rigorous diffraction theory;

D O I：

10.1117/12.485390

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Standard simulations of optical projection systems for lithography with scalar or vector methods of Fourier optics make the assumption that the wafer stack consists of homogeneous layers. We introduce a general scheme for the rigorous electromagnetic field (EMF) simulation of lithographic exposures over non-planar wafers. Rigorous EMF simulations are performed with the finite-difference time-domain (FDTD) method. The described method is used to simulate several typical scenarios for lithographic exposures over non-planar wafers. This includes the exposure of resist lines over a poly-Si line on the wafer with orthogonal orientation, the simulation of "classical" notch problems, and the simulation of lithographic exposures over wafers with defects.

引用

页码：101 / 111

页数：11

共 20 条

[1] SIMULATION OF FOCUS EFFECTS IN PHOTOLITHOGRAPHY [J].