Fabrication technologies of polycrystalline silicon thin film transistors at a low temperature

被引：0
|
作者：
Sameshima, T
机构：
来源：
PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1997年 / 96卷 / 23期
关键词：
remote plasma CVD; interface trapping states; fixed oxide charge; laser crystallization; lateral grain growth; wet annealing; carrier life time; gas combustion;
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Essential technologies are discussed for fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) at a low temperature. The remote plasma chemical vapor deposition (CVD) is presented as a method of the SiO2/Si interface formation, with low damage. Using Sig gate insulators formed by remote plasma CVD, poly-Si TFTs with a high mobility of 640 cm(2)/Vs were fabricated at 270 degrees C in the laser crystallization silicon films formed on glass. The paper also discusses the post treatment processes to improve TFT characteristics. The wet annealing and the gas combustion annealing are presented.
引用
收藏
页码：21 / 29
页数：9
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