Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors

被引：15

作者：

Liu, Han-Yin ^{[1
]}

Wang, Yi-Hsuan ^{[2
]}

Hsu, Wei-Chou ^{[2
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

来源：

IEEE SENSORS JOURNAL | 2015年 / 15卷 / 09期

关键词：

Gallium nitride (GaN); dark current; metal-semiconductor-metal (MSM); passivation; photodetector (PD); surface leakage; ultraviolet (UV); ULTRAVIOLET; PERFORMANCE;

D O I：

10.1109/JSEN.2015.2439265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes the H2O2 oxidation technique to grow Al2O3 as the surface passivation layer of the metal-semiconductor-metal ultraviolet (UV) photodetector (PD). The dark current of the H2O2-grown-Al2O3-passivated PD was reduced from 104 to 4.43 nA. The surface leakage of the PD was reduced from 65.7 nA/1.67 mu A to 0.46 nA/0.5 nA in the dark/under illumination. It was found that similar to 35% photocurrent results from the surface leakage. The surface leakages in the H2O2-grown-Al2O3 passivated and the plasma-enhanced chemical vapor deposition (PECVD)-grown-SiO2 passivated PDs were reduced significantly. Although the photocurrent and the photoresponsivity of the oxide-passivated PDs were lower than those of the unpassivated one, the dark current, UV-to-visible rejection ratio, noise equivalent power, and the detectivity of the oxide-passivated PDs were better than those of the unpassivated one. In addition, the performances of the H2O2-grown-Al2O3 passivated PD were better than those of the PECVD-grown-SiO2 passivated one.

引用

页码：5202 / 5207

页数：6

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