Lateral IBIC characterization of single crystal synthetic diamond detectors

被引：8

作者：

Lo Giudice, Alessandro ^{[1
,2
]}

Olivero, Paolo ^{[1
,2
]}

Manfredotti, Claudio ^{[1
,2
]}

Marinelli, Marco ^{[3
]}

Milani, Enrico ^{[3
]}

Picollo, Federico ^{[1
,2
]}

Prestopino, Giuseppe ^{[3
]}

Re, Alessandro ^{[1
,2
]}

Rigato, Valentino ^{[4
]}

Verona, Claudio ^{[3
]}

Verona-Rinati, Gianluca ^{[1
,3
]}

Vittone, Ettore ^{[1
,2
]}

机构：

[1] Univ Turin, NIS Ctr Excellence, Expt Phys Dept, I-10125 Turin, Italy

[2] Ist Nazl Fis Nucl, Sez Torino, I-10125 Turin, Italy

[3] Univ Roma Tor Vergata, Dipartimento Ingn Meccan, I-00133 Rome, Italy

[4] Ist Nazl Fis Nucl, Natl Labs Legnaro, I-35020 Legnaro, PD, Italy

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 02期

关键词：

single crystals; diamond; ion beam induced charge; charge transport; detectors;

D O I：

10.1002/pssr.201004488

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p-type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：80 / 82

页数：3

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