Exciton and multi-exciton structures in GaAs quantum dots studied by single-photon correlation spectroscopy

被引：3

作者：

Kihira, T. ^{[1
]}

Tanaka, S. ^{[1
]}

Yamagiwa, M. ^{[2
]}

Ogawa, Y. ^{[1
]}

Minami, F. ^{[1
]}

Koguchi, N. ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[2] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 5-6期

关键词：

quantum dot; exciton; micro-photoluminescence; droplet epitaxy; GaAs;

D O I：

10.1016/j.jlumin.2007.11.011

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single-photon emitters and detectors are key devices for realizing secure communications by single-photon-based cryptography and single-photon-based quantum computing. For the establishment of these technologies, we need to understand the electronic structures of single and multiple excitons. Therefore, we have studied their emissions via the micro-photoluminescence (mu-PL) spectra of strain-free GaAs/AlGaAs single quantum dots, using excitation power dependence, time-resolved, and single-photon correlation measurements. Under pulsed excitation, we observed clear photon antibunching and bunching by auto- and cross-correlation measurements. From these results, we found that the emission peaks observed in the mu-PL spectra originated from exciton, charged exciton, and biexciton states. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：800 / 802

页数：3

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