Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

被引：0
作者：
Zhao, Yangyang [1 ]
Zhang, Guofu [1 ]
Zhan, Runze [1 ]
She, Juncong [1 ]
Deng, Shaozhi [1 ]
Xu, Ningsheng [1 ]
Chen, Jun [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2018年
关键词：
ZnO nanowire; induim doped; field emission; ARRAYS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/mu m and current fluctuation of similar to 1.4%.
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