High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets

被引：0
作者：
Yi, Q
Bo, BX
Zhang, BS
Gao, X
Zhang, XD
Shi, JW
机构：
[1] Changchun Inst Opt & Fine Mech, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
[2] Jilin Univ, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
molecular beam epitaxy; quantum well; semiconductor indium gallium arsenide; laser diodes;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structures of low-divergence 980 nm semiconductor lasers grown by molecular beam epitaxy are presented. The high-power, lower-beam-divergence laser consists of an array of closely spaced, tapered waveguides and nonabsorbing facets. The emission wavelength is 982 nm. The FWHM of the far-field pattern is 10 x 28 degrees. Continuous-wave output power of 5.1 W has been achieved. (C) 2001 Elsevier Science B.V. All rights reserved.
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收藏
页码：202 / 205
页数：4
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