Threshold voltage model of short-channel FD-SOI MOSFETs with vertical Gaussian profile

被引：49
作者：
Zhang, Guohe [1 ]
Shao, Zhibiao [1 ]
Zhou, Kai [1 ]
机构：
[1] Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期
关键词：
fully depleted (FD) silicon-on-insulator (SOI); MOSFETs; Gaussian; threshold voltage model;
D O I：
10.1109/TED.2007.914832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel approximation of 2-D potential function perpendicular to the channel for fully depleted (FD) sificon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile is proposed in the paper, then an analytical threshold voltage model is derived. The model agrees well with the MEDICI numerical simulation results. It represents a feasible way to find the threshold voltage and gives some reference points in developing new 2-D models for nonuniform FD-SOI devices.
引用
收藏
页码：803 / 809
页数：7
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