D-Band MUTC Photodiodes With Flat Frequency Response

被引：23

作者：

Chao, Enfei ^{[1
]}

Xiong, Bing ^{[1
]}

Sun, Changzheng ^{[1
]}

Hao, Zhibiao ^{[1
]}

Wang, Jian ^{[1
]}

Wang, Lai ^{[1
]}

Han, Yanjun ^{[1
]}

Li, Hongtao ^{[1
]}

Yu, Jiadong ^{[1
]}

Luo, Yi ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2022年 / 28卷 / 02期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

Integrated circuit modeling; Bandwidth; Frequency response; Electric fields; Power generation; Indium phosphide; III-V semiconductor materials; Comprehensive design; inductive peaking; modified uni-traveling-carrier photodiode; frequency response; TRAVELING-CARRIER PHOTODIODES; HIGH-POWER; GENERATION; DESIGN;

D O I：

10.1109/JSTQE.2021.3115488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel back-illuminated modified uni-traveling- carrier photodiodes (MUTC-PDs) are reported to demonstrate wide bandwidth and high output power performance at D-band (110-170 GHz) regime. A comprehensive design model is employed to predict and tune the frequency response by incorporating coplanar waveguides (CPWs) with different inductive peaking effects. As a demonstration, 4.5-mu m-diameter photodiodes with two types of CPWs are fabricated to exhibit different frequency response profiles. Both PDs exhibit a 3-dB bandwidth over 150 GHz and the measured frequency responses are in excellent agreement with simulations. Thanks to the proper design of the CPW electrodes, the two PDs exhibit an output power roll-off of only 4.3 dB and 4.8 dB from dc to 170 GHz, respectively, and high saturation performance is maintained over the broadband frequency range of 130-170 GHz.

引用

页数：8

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