A Wearable Piezoelectric Energy Harvester Rectified by a Dual-Gate Thin-Film Transistor

被引：21

作者：

Iranmanesh, Emad ^{[1
,2
]}

Rasheed, Ahmed ^{[1
,2
,3
]}

Li, Weiwei ^{[1
,2
,3
,4
]}

Wang, Kai ^{[1
,2
,3
,4
]}

机构：

[1] Sun Yat Sen Univ SYSU Carnegie Mellon Univ CMU Jo, Sch Elect & Informat Technol, Guangzhou 510006, Guangdong, Peoples R China

[2] SYSU CMU Shunde Int Joint Res Inst, Foshan 523800, Peoples R China

[3] SYSU, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China

[4] Carnegie Mellon Univ, Elect & Comp Engn Dept, Pittsburgh, PA 15217 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 02期

关键词：

Dual-gate thin-film transistor (DGTFT); piezoelectric energy harvester; wearable electronics; FINGER MOVEMENTS; FREQUENCY;

D O I：

10.1109/TED.2017.2780261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper addresses a wearable piezoelectric energy harvester that combines a PVDF piezoelectric charge generator with an a-Si:H dual-gate thin-film transistor as a rectifier. An analytical model and equivalent circuit elaborate their working principle and device physics. A preliminary experimental study proves the device concept and demonstrates that such a harvester is capable of generating microwatt-range power with a simple 90 degrees finger bending action. Coupled with low-cost and large-area fabrication processes, a pixelated energy-harvesting array can be potentially achievable, making it a promising alternative to energy sources for wearable electronics.

引用

页码：542 / 546

页数：5

共 14 条

[1] PHYSICAL BASIS FOR PIEZOELECTRICITY IN PVDF [J].