Order-N orbital-free density-functional calculations with machine learning of functional derivatives for semiconductors and metals

被引:19
作者
Imoto, Fumihiro [1 ,2 ]
Imada, Masatoshi [2 ,3 ]
Oshiyama, Atsushi [1 ]
机构
[1] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan
[2] Waseda Univ, Waseda Res Inst Sci & Engn, Tokyo 1698555, Japan
[3] Toyota Phys & Chem Res Inst, Nagakute, Aichi 4801192, Japan
来源
PHYSICAL REVIEW RESEARCH | 2021年 / 3卷 / 03期
关键词
KINETIC-ENERGY; LOCAL PSEUDOPOTENTIALS; ELECTRON-DENSITY; APPROXIMATION; EXCHANGE;
D O I
10.1103/PhysRevResearch.3.033198
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Orbital-free density-functional theory (OFDFT) offers a challenging way of electronic-structure calculations scaled as O(N) computation for system size N. We here develop a scheme of the OFDFT calculations based on the accurate and transferrable kinetic-energy density-functional (KEDF), which is created in an unprecedented way using appropriately constructed neural network (NN). We show that our OFDFT scheme reproduces the electron density obtained in the state-of-the-art DFT calculations and then provides accurate structural properties of 24 different systems, ranging from atoms, molecules, metals, semiconductors, and an ionic material. The accuracy and the transferability of our KEDF is achieved by our NN training system in which the kinetic-energy functional derivative (KEFD) at each real-space grid point is used. The choice of the KEFD as a set of training data is essentially important, because first it appears directly in the Euler equation, which one should solve, and second, its learning assists in reproducing the physical quantity expressed as the first derivative of the total energy. More generally, the present development of KEDF T[rho] is in the line of systematic expansion in terms of the functional derivatives delta l(1)T/delta rho l(1), through progressive increase of l(1). The present numerical success demonstrates the validity of this approach. The computational cost of the present OFDFT scheme indeed shows the O(N) scaling, as is evidenced by the computations of the semiconductor SiC used in power electronics.
引用
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页数:17
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