The luminescence and optoelectrical properties of ITO films prepared by a sputter type negative metal ion deposition

被引：6

作者：

Jang, H. S. ^{[1
]}

Choi, D. H. ^{[1
]}

Kim, Y. S. ^{[1
]}

Lee, J. H. ^{[1
]}

Kim, Daeil ^{[1
]}

机构：

[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea

来源：

OPTICS COMMUNICATIONS | 2007年 / 278卷 / 01期

关键词：

ITO; negative ion beam deposition; luminescence; vacuum annealing;

D O I：

10.1016/j.optcom.2007.05.066

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Transparent conducting indium tin oxide (ITO) thin films were prepared on glass substrates by a magnetron sputter type negative ion source which requires cesium (Cs) vapor injection for surface negative ionization on the ITO target surface. Although the film was prepared at 70 degrees C, it attained high optical transmittance, 88% and low resistivity, 2.03 x 10(-4) Omega cm, at an optimized Cs partial pressure of P-Cs = 1.7 x 10(-3) Pa. The as-deposited ITO films have a poly-crystalline structure with (2 11), (222), (400), (4 11) and (440) reflections. Also, ITO films prepared at Pc, = 1.7 x 10-3 Pa were post-deposition vacuum annealed at 300 degrees C for 30 min. The films had a resistivity Of 1.8 X 10-4 Omega cm and a transparency of 89.2%. The post-deposition vacuum annealed ITO film was used as an anode for a transparent organic light emitting diode (TOLED). A maximum luminance of 19,000 cd/m(2) was obtained. (c) 2007 Published by Elsevier B.V.

引用

页码：99 / 103

页数：5

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