GaN single crystals of different habit grown from solution at near atmospheric pressure

被引：5

作者：

Feigelson, B. N. ^{[1
]}

Hite, J. K. ^{[1
]}

Garces, N. Y. ^{[1
]}

Freitas, J. A., Jr. ^{[1
]}

Tischler, J. G. ^{[1
]}

Klein, P. B. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 18期

关键词：

Growth from high temperature solutions; Single crystal growth; Nitrides; GaN; BULK GAN; AMMONOTHERMAL GROWTH; TEMPERATURE-GRADIENT; FLUX METHOD; GALLIUM; MELT; ALN;

D O I：

10.1016/j.jcrysgro.2010.04.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Near atmospheric pressure solution growth is one of the many developing methods for growing bulk GaN from solution. Apart from other approaches, this method holds certain advantages, such as relatively low growth pressure and temperature, and the ability to grow high quality GaN crystals with different orientations by varying the solvent composition. GaN whiskers of millimeter scale size with exceptional mechanical and optical properties were grown from solution. Crystals of near isotropic shape were also grown from solution by manipulating additives in the basic solvent. Published by Elsevier B.V.

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收藏

页码：2551 / 2557

页数：7

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