Investigation of the V-pit related morphological and optical properties of InGaN/GaN multiple quantum wells

被引：20

作者：

Lin, F. ^{[1
]}

Xiang, N. ^{[1
]}

Chen, P. ^{[2
]}

Chow, S. Y. ^{[2
]}

Chua, S. J. ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Inst Mat Res & Engn, Singapore 1117602, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 04期

关键词：

D O I：

10.1063/1.2884534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the effects of large V-pits on the morphological and optical properties of InGaN / GaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaN/GaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c-plane MQWs, the MQWs grown on the {10 (1) over bar1} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c-plane MQWs. Furthermore, when the low-temperature GaN buffer was very thin, the {11 (2) over barm} (m >= 2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c-plane MQWs and those of the {10 (1) over bar1} faceted sidewall MQWs. (c) 2008 American Institute of Physics.

引用

页数：5

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