Investigation of the V-pit related morphological and optical properties of InGaN/GaN multiple quantum wells

In this work, the effects of large V-pits on the morphological and optical properties of InGaN / GaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaN/GaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c-plane MQWs, the MQWs grown on the {10 (1) over bar1} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c-plane MQWs. Furthermore, when the low-temperature GaN buffer was very thin, the {11 (2) over barm} (m >= 2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c-plane MQWs and those of the {10 (1) over bar1} faceted sidewall MQWs. (c) 2008 American Institute of Physics.