Nanopillar junctions

被引：11

作者：

Blamire, M. G. ^{[1
]}

Aziz, A. ^{[1
]}

Robinson, J. W. A. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2011年 / 369卷 / 1948期

基金：

英国工程与自然科学研究理事会;

关键词：

giant magnetoresistance; spin-transfer torque switching; spintronics; magnetic random access memory; Josephson junctions; SPIN-POLARIZED CURRENT; TUNNEL-JUNCTIONS; ENHANCED MAGNETORESISTANCE; GIANT MAGNETORESISTANCE; MAGNETIC-PROPERTIES; TRANSFER DEVICES; FABRICATION; NANOMAGNET; FILM; NANOSTRUCTURES;

D O I：

10.1098/rsta.2010.0343

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The fabrication of nanopillar devices has been essential to the understanding and development of metallic spin electronics. This paper discusses the processes that can be used for the fabrication of such structures and the challenges in which they present, with particular emphasis on extreme sub-micrometre pillar structures suitable for the study of spin-transfer torque effects.

引用

页码：3198 / 3213

页数：16

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