Differential piezoresistive pressure sensor

被引：6
|
作者：
Firtat, B. [1 ]
Moldovan, C. [1 ]
Iosub, R. [1 ]
Necula, D. [1 ]
Nisulescu, M. [1 ]
机构：
[1] Natl Inst Res & Dev Microtechnol, Bucharest, Romania
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
pressure sensor; micromachining; piezoresistive membrane;
D O I：
10.1109/SMICND.2007.4519653
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The pressure microsensor presented in this paper is based on a thin, elastic membrane, with boron implanted piezoresistive elements included, positioned in the maximum mechanical stress areas on the membrane. The pressure range for the developed sensors is in the 0 divided by 400 mbar range, and this is the main novelty of this device. The optimized design and technological steps offer high efficiency, sensitivity and reliability to the developed pressure sensor.
引用
收藏
页码：87 / 90
页数：4
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