A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range

被引：34

作者：

Chen, JS ^{[1
]}

Kornegay, KT

Ryu, SH

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 02期

关键词：

silicon carbide; smart power; wide bandgap;

D O I：

10.1109/4.743772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the design and fabrication of a high-temperature silicon carbide CMOS intelligent gate driver circuit intended for high-power switching applications. Using a temperature-insensitive comparator, several functions including overvoltage and undervoltage, as well as short- and open-load detection, are provided, all of which are operational up to 300 degrees C. These integrated circuits are ideally suited for harsh and high-temperature environments such as automotive and aircraft jet engines.

引用

页码：192 / 204

页数：13

共 14 条

[1] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457

[2] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J].

BALIGA, BJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1759-1764

[3] Trends in power semiconductor devices [J].

Baliga, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1717-1731

[4]

BHATNAGAR M, 1991, PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P176, DOI 10.1109/ISPSD.1991.146093

[5] Design of a process variation tolerant CMOS opamp in 6H-SiC technology for high-temperature operation [J].

Chen, JS ;

Kornegay, KT .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1998, 45 (11) :1159-1171

[6] DOUBLE AND TRIPLE CHARGE PUMP FOR POWER IC - DYNAMIC-MODELS WHICH TAKE PARASITIC EFFECTS INTO ACCOUNT [J].

DICATALDO, G ;

PALUMBO, G .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1993, 40 (02) :92-101

[7] DOUBLE AND TRIPLE CHARGE PUMPS WITH MOS DIODES - DYNAMIC-MODELS TO AN OPTIMIZED DESIGN [J].

DICATALDO, G ;

PALUMBO, G .

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 1994, 22 (05) :377-386

[8] ON-CHIP HIGH-VOLTAGE GENERATION IN MNOS INTEGRATED-CIRCUITS USING AN IMPROVED VOLTAGE MULTIPLIER TECHNIQUE [J].

DICKSON, JF .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) :374-378

[9]

*NAT RES COUNC, 1995, MAT HIGH TEMP SEM DE

[10]

PALMOUR JW, 1991, P 1 INT HIGH TEMP EL, P229

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