Abrupt heating-induced high-quality crystalline rubrene thin films for organic thin-film transistors

被引：72

作者：

Lee, Hyeok Moo ^{[1
]}

Moon, Hanul ^{[2
]}

Kim, Hyo-Sik ^{[1
]}

Kim, Yong Nam ^{[1
]}

Choi, Sung-Min ^{[1
]}

Yoo, Seunghyup ^{[2
]}

Cho, Sung Oh ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Nucl & Quantum Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 08期

关键词：

Organic thin-film transistors (OTFTs); Rubrene; High-quality crystalline film; Organic semiconductor active layer; TRANSPORT; PENTACENE; MATRIX;

D O I：

10.1016/j.orgel.2011.05.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a simple but effective approach to fabricate high-quality crystalline rubrene thin-film active layers for organic thin-film transistors (OTFTs) based on an abrupt heating process. Through this method, continuous, highly ordered, and highly oriented crystalline rubrene thin films comprising large single-crystalline grains (average size: similar to 80 mu m) can be remarkably rapidly produced in just 1 min without any dielectric surface modification process. OTFTs with carrier mobility as high as 1.21 cm(2) V (1) s (1) and on/off current ratios greater than 10(6) are demonstrated under air-ambient condition using the approach. These results suggest that our approach is very promising to fabricate high-performance OTFTs for practical applications in organic electronics. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1446 / 1453

页数：8

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