High rate deposition of photocatalytic TiO2 films with high activity by hollow cathode gas-flow sputtering method

被引：13

作者：

Kubo, Yoshiyuki ^{[1
]}

Iwabuchi, Yoshinori ^{[2
]}

Yoshikawa, Masato ^{[2
]}

Sato, Yasushi ^{[1
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Kanagawa 2298558, Japan

[2] Bridgestone Corp, Div Res & Dev, Tokyo 1878531, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2008年 / 26卷 / 04期

关键词：

D O I：

10.1116/1.2836425

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photocatalytic TiO2 films were deposited by a hollow cathode gas-flow sputtering method using two Ti metal targets mounted parallel to each other. The Ar and O-2 flow rates were 3000 and 0-50 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively, and total gas pressure during the deposition was maintained at 45 Pa. The highest deposition rate for the photocatalytic TiO2 films was 162 nm/min at 30 SCCM of O-2 flow. The as-deposited films and postannealed films, annealed in air at 300 degrees C for 1 h, were used to carry out photocatalytic decomposition of acetaldehyde (CH3CHO). In particular, the postannealed films showed extremely high photocatalytic activity compared to the photocatalytic activity of films deposited by conventional reactive sputtering. (C) 2008 American Vacuum Society.

引用

页码：893 / 897

页数：5

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