Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

被引:9
作者
Zeng, Miaoxuan [1 ,2 ]
Huang, Yifeng [1 ,2 ]
Huang, Yuan [3 ]
Chen, Jun [1 ,2 ]
She, Juncong [1 ,2 ]
Deng, Shaozhi [1 ,2 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[2] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
[3] Sun Yat Sen Univ, Sch Microelect Sci & Technol, Zhuhai 519082, Peoples R China
基金
中国国家自然科学基金;
关键词
Gallium arsenide; Logic gates; Iron; Silicon; Electron emission; Field effect transistors; Voltage control; Si tip; Hy-GAAFET; on-tip integration; actively controlled field electron emission;
D O I
10.1109/LED.2022.3148397
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gated Si-tip with on-tip integrated gate-all-around field effect transistor using hyperbolic nano-channel (Hy-GAAFET) for actively controlled field electron emission is presented. Fully IC compatible nano-fabrication procedures were developed to obtain the Hy-GAAFET and the on-tip integration with the Si-tip emitter. The Hy-GAAFET exhibit characteristics of I-on/I-off = similar to 10(4), I-sat = 0.25 mu A/mu m at V-gaa = -0.4 V and 20 mV of drain-induced barrier lowering. The emission current of the gated Si-tip can be actively regulated by the Hy-GAAFET gate voltage, i.e., 0.4 pA/mV with an extractor voltage of 53 V and showed a well-optimized current stability. This on- chip integrated device is promising for applications in modern miniature vacuum nano electronics.
引用
收藏
页码:466 / 469
页数:4
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