Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

被引：10

作者：

Zeng, Miaoxuan ^{[1
,2
]}

Huang, Yifeng ^{[1
,2
]}

Huang, Yuan ^{[3
]}

Chen, Jun ^{[1
,2
]}

She, Juncong ^{[1
,2
]}

Deng, Shaozhi ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[2] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

[3] Sun Yat Sen Univ, Sch Microelect Sci & Technol, Zhuhai 519082, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Gallium arsenide; Logic gates; Iron; Silicon; Electron emission; Field effect transistors; Voltage control; Si tip; Hy-GAAFET; on-tip integration; actively controlled field electron emission;

D O I：

10.1109/LED.2022.3148397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gated Si-tip with on-tip integrated gate-all-around field effect transistor using hyperbolic nano-channel (Hy-GAAFET) for actively controlled field electron emission is presented. Fully IC compatible nano-fabrication procedures were developed to obtain the Hy-GAAFET and the on-tip integration with the Si-tip emitter. The Hy-GAAFET exhibit characteristics of I-on/I-off = similar to 10(4), I-sat = 0.25 mu A/mu m at V-gaa = -0.4 V and 20 mV of drain-induced barrier lowering. The emission current of the gated Si-tip can be actively regulated by the Hy-GAAFET gate voltage, i.e., 0.4 pA/mV with an extractor voltage of 53 V and showed a well-optimized current stability. This on- chip integrated device is promising for applications in modern miniature vacuum nano electronics.

引用

页码：466 / 469

页数：4

共 19 条

[1] Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons [J].