Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum

被引：51

作者：

Yuan, Shuo-Huang ^{[1
]}

Wang, Chao-Chun ^{[1
]}

Huang, Shiau-Yuan ^{[1
]}

Wuu, Dong-Sing ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 02期

关键词：

Solar blind; photodetector; gallium oxide; responsivity; trace aluminum; sputtering; SOLAR-BLIND PHOTODETECTORS; THIN-FILMS; EFFICIENCY; SAPPHIRE; BANDGAP;

D O I：

10.1109/LED.2017.2782693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A solar-blind photodetector (PD) based on the cosputtered aluminum-gallium oxide (AGO) material after thermal annealing at 900 degrees C has been demonstrated using a metal-semiconductor-metal structure. By incorporating optimum trace aluminum (Al), the AGO PD shows the peak responsivity (at 230 nm) of 1.38 A/W under a bias voltage of 5 V, which is 53.61 times greater than that of the PD from the gallium oxide (GO) film without incorporating any Al content. The photocurrent, dark current, and detectivity (at 5 V and 230 nm) of AGOPD are also improved to be 46.4, 0.83, and 96.5 times, respectively, greater than those of GO one. Unlike conventional GO samples revealing obvious drop in spectral response from 250 to 200 nm, the AGO PD with an Al/(Al + Ga) ratio of 1.8% exhibits a nearly flat responsivity curve in the deep ultraviolet region. This improvement is significant compared with previous reports for the GO and AGO PDs by other growth methods.

引用

页码：220 / 223

页数：4

共 26 条

[1] Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors [J].

Chang, Ting-Hao ;

Chang, Shoou-Jinn ;

Chiu, C. J. ;

Wei, Chih-Yu ;

Juan, Yen-Ming ;

Weng, Wen-Yin .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (08) :915-918

[2] Structural and optical evolution of Ga2O3/glass thin films deposited by radio frequency magnetron sputtering [J].

Choi, K. H. ;

Kang, H. C. .

MATERIALS LETTERS, 2014, 123 :160-164

[3] Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates [J].

Cui, Shujuan ;

Mei, Zengxia ;

Zhang, Yonghui ;

Liang, Huili ;

Du, Xiaolong .

ADVANCED OPTICAL MATERIALS, 2017, 5 (19)

[4] (AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity [J].

Feng, Qian ;

Li, Xiang ;

Han, Genquan ;

Huang, Lu ;

Li, Fuguo ;

Tang, Weihua ;

Zhang, Jincheng ;

Hao, Yue .

OPTICAL MATERIALS EXPRESS, 2017, 7 (04) :1240-1248

[5] Photoconductive gain modelling of GaN photoconductors [J].

Garrido, JA ;

Monroy, E ;

Izpura, I ;

Munoz, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) :563-568

[6] Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology [J].

Guo, Daoyou ;

Wu, Zhenping ;

Li, Peigang ;

An, Yuehua ;

Liu, Han ;

Guo, Xuncai ;

Yan, Hui ;

Wang, Guofeng ;

Sun, Changlong ;

Li, Linghong ;

Tang, Weihua .

OPTICAL MATERIALS EXPRESS, 2014, 4 (05) :1067-1076

[7] Self-Powered Ultrafast Broadband Photodetector Based on p-n Heterojunctions of CuO/Si Nanowire Array [J].

Hong, Qingshui ;

Cao, Yang ;

Xu, Jia ;

Lu, Huimin ;

He, Junhui ;

Sun, Jia-Lin .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (23) :20887-20894

[8] High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process [J].

Hu, G. C. ;

Shan, C. X. ;

Zhang, Nan ;

Jiang, M. M. ;

Wang, S. P. ;

Shen, D. Z. .

OPTICS EXPRESS, 2015, 23 (10) :13554-13561

[9] Ultrahigh External Quantum Efficiency from Thin SnO2 Nanowire Ultraviolet Photodetectors [J].

Hu, Linfeng ;

Yan, Jian ;

Liao, Meiyong ;

Wu, Limin ;

Fang, Xiaosheng .

SMALL, 2011, 7 (08) :1012-1017

[10] REFLECTANCE OF THINLY OXIDIZED SILICON AT NORMAL INCIDENCE [J].

HUEN, T .

APPLIED OPTICS, 1979, 18 (12) :1927-1932

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