Thermoelectric properties of photo- and thermal CVD boron and boron phosphide films

被引：10

作者：

Kumashiro, Y ^{[1
]}

Enomoto, T ^{[1
]}

Sato, K ^{[1
]}

Abe, Y ^{[1
]}

Hirata, K ^{[1
]}

Yokoyama, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2004年 / 177卷 / 02期

关键词：

amorphous boron films; polycrystailine boron phosphide films; van der Pauw method; electrical conductivity; thermoelectric power; thermoelectric figure-of-merit;

D O I：

10.1016/j.jssc.2003.05.001

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The electrical properties of n-BP films newly prepared by thermal CVD in the B2H6-PH3-H-2 system were improved by a deuterium lamp excitation. High-temperature electrical conductivity and thermoelectric power of amorphous boron and polycrystalline boron phosphide films grown on silica glass were measured to evaluate the thermoelectric figure-of-merit (Z). In particular, the Z-value for photo-thermal BP films was higher (10(-4)/K) than that of boron films, indicating that they are promising for high-temperature thermoelectric materials. (C) 2003 Elsevier Inc. All rights reserved.

引用

页码：529 / 532

页数：4