The effect of radiation parameters on the performance of photo-activated gas sensors

被引：21
作者：
Espid, Ehsan [1 ]
Noce, Aline Satomi [1 ]
Taghipour, Fariborz [1 ]
机构：
[1] Univ British Columbia, Chem & Biol Engn Dept, 2360 East Mall, Vancouver, BC V6T 1Z4, Canada
来源：
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY | 2019年 / 374卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Gas sensor; Metal oxide semiconductor; UV-LED; Irradiation parameters; GRAPHITIC CARBON NITRIDE; ROOM-TEMPERATURE; SENSING PROPERTIES; UV-LIGHT; TIN OXIDE; SNO2; ZNO; FILMS; AU; CO;
D O I：
10.1016/j.jphotochem.2019.01.038
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The gas sensing characteristics of several favorable metal oxide semiconductors, such as ZnO, In2O3, SnO2, and WO3, under various irradiation conditions, utilizing ultraviolet light emitting diodes (UV-LED), were investigated. The morphology and structure of sensing materials prepared by precipitation route were analyzed, and the sensors' performances were evaluated against low concentrations of NO2. In particular, the effects of several UV source-related operating parameters, such as irradiation wavelength, irradiance, and irradiation pattern, were studied, and the underlying mechanism for the adsorption/desorption kinetics of gas molecules under different UV irradiation was demonstrated. The effect of radiation specifications was found to play an essential role in the response of the sensors. Thus, appropriate conditions must be applied to the design and operation of the UV-LED activated gas sensors for optimal performance.
引用
收藏
页码：95 / 105
页数：11
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