Fabrication of por-Si/SnOx Nanocomposite Layers for Gas Microsensors and Nanosensors

被引：9

作者：

Bolotov, V. V. ^{[1
]}

Korusenko, P. M. ^{[1
]}

Nesov, S. N. ^{[1
]}

Povoroznyuk, S. N. ^{[1
]}

Roslikov, V. E. ^{[1
]}

Kurdyukova, E. A. ^{[1
]}

Sten'kin, Yu. A. ^{[1
]}

Shelyagin, R. V. ^{[1
]}

Knyazev, E. V. ^{[1
]}

Kan, V. E. ^{[1
]}

Ponomareva, I. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Omsk Branch, Rzhanov Inst Semicond Phys, Omsk 644018, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 05期

关键词：

TIN OXIDE-FILMS; SILICON; SENSORS; DEPOSITION; DIOXIDE;

D O I：

10.1134/S1063782611050071

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide were fabricated by various methods. The structure, as well as elemental and phase composition, of the obtained nanocomposites were studied using transmission and scanning electron microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The results obtained confirm the formation of nanocomposite layers with a thickness as large as 2 mu m thick and SnOx stoichiometry coefficients x = 1.0-2.0. Significant tin diffusion into the porous silicon matrix with D-eff approximate to 10(-14) cm(2) s(-1) was observed upon annealing at 770 K. Test sensor structures based on por-Si/SnOx nanocomposite layers grown by magnetron deposition showed fairly high stability of properties and sensitivity to NO2.

引用

页码：693 / 698

页数：6

共 17 条

[1] On the apparently anomalous response of porous silicon to nitrogen dioxide [J].

Amato, G ;

Boarino, L ;

Bellotti, F .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4409-4411

[2] Permeated porous silicon for hydrocarbon sensor fabrication [J].

Angelucci, R ;

Poggi, A ;

Dori, L ;

Cardinali, GC ;

Parisini, A ;

Tagliani, A ;

Mariasaldi, M ;

Cavani, F .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) :95-99

[3]

[Anonymous], 2008, NANOTECHNOLOGY ENABL

[4] Effect of ethanol on optical and electrical parameters of porous silicon [J].

Bolotov, V. V. ;

Sten'kin, Yu. A. ;

Roslikov, V. E. ;

Kang, V. E. ;

Ponomareva, I. V. ;

Nesov, S. N. .

SEMICONDUCTORS, 2009, 43 (07) :925-928

[5] Effect of halogens on the formation and properties of the porous silicon layers [J].

Bolotov, V. V. ;

Sten'kin, Yu. A. ;

Davletkil'deev, N. A. ;

Krivozubov, O. V. ;

Ponomareva, I. V. .

SEMICONDUCTORS, 2009, 43 (01) :92-95

[6] Effect of ammonia adsorption on the electrical characteristics of mesoporous silicon [J].

Borini, Stefano .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)

[7]

Briggs D., 1987, PRACTICAL SURFACE AN

[8]

Buono-Core GE, 2006, J CHIL CHEM SOC, V51, P950, DOI 10.4067/S0717-97072006000300004

[9] Tin dioxide sol-gel derived than films deposited on porous silicon [J].

Cobianu, C ;

Savaniu, C ;

Buiu, O ;

Dascalu, D ;

Zaharescu, M ;

Parlog, C ;

van den Berg, A ;

Pecz, B .

SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) :114-120

[10]

Davis L. E., 1986, HDB AUGER ELECT SPEC, P8

← 1 2 →